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| Transistor 2SC3932 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm (0.425) 0.30.0 +0.1 0.150.05 +0.10 s Features q q 3 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.250.10 2.10.1 5u 1 2 0.20.1 0 to 0.1 0.90.1 0.90.1 +0.2 (0.65) (0.65) 1.30.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25C) Ratings 30 20 3 50 150 150 -55 ~ +150 Unit V V V mA mW C C 10u 2.00.2 1:Base 2:Emitter 3:Collector EIAJ:SC-70 SMini3-G1 Package Marking symbol : R s Electrical Characteristics Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Transition frequency Base to emitter voltage Common emitter reverse transfer capacitance Common base reverse transfer capacitance Power gain (Ta=25C) Symbol VCBO VEBO hFE fT* VBE Cre Crb PG Conditions IC = 100A, IE = 0 IE = 10A, IC = 0 VCB = 10V, IE = -2mA VCB = 10V, IE = -15mA, f = 200MHz VCB = 10V, IE = -2mA VCE = 10V, IC = 1mA, f = 10.7MHz VCE = 6V, IC = 0, f = 1MHz VCB = 10V, IE = -1mA, f = 200MHz min 30 3 25 800 0.72 1 0.8 20 1.5 250 1600 MHz V pF pF dB typ max Unit V V *h FE Rank classification Rank fT(MHz) Marking Symbol T S 800 ~ 1400 1000 ~ 1600 RT RS 425 Transistor PC -- Ta 240 24 Ta=25C IB=300A 200 20 20 250A 16 200A 12 2SC3932 IC -- VCE 24 VCE=10V Ta=25C IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 160 Collector current IC (mA) 18 16 120 150A 12 80 8 100A 8 40 4 50A 4 0 0 20 40 60 80 100 120 140 160 0 0 6 12 0 0 100 200 300 400 500 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IB -- VBE 400 VCE=10V Ta=25C 350 50 60 IC -- VBE 240 25C VCE=10V hFE -- IC VCE=10V Forward current transfer ratio hFE 200 Base current IB (A) 300 250 200 150 100 50 0 0 0.4 0.8 1.2 1.6 2.0 Collector current IC (mA) Ta=75C 40 -25C 160 Ta=75C 120 25C -25C 30 20 80 10 40 0 0 0.4 0.8 1.2 1.6 2.0 0 0.1 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25C 0.1 -25C 0.03 0.01 0.1 Ta=75C IC/IB=10 1600 fT -- I E Common emitter reverse transfer capacitance Cre (pF) 2.4 VCB=10V Ta=25C Cre -- VCE IC=1mA f=10.7MHz Ta=25C Transition frequency fT (MHz) 1400 1002 1000 800 600 400 200 0 - 0.1 - 0.3 2.0 1.6 1.2 0.8 0.4 0.3 1 3 10 30 100 -1 -3 -10 -30 -10 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 426 Transistor Zrb -- IE 120 2SC3932 PG -- IE VCB=10V f=2MHz Ta=25C 40 35 VCB=10V f=100MHz Rg=50 Ta=25C 12 VCB=10V f=100MHz Rg=50k Ta=25C NF -- IE Reverse transfer impedance Zrb () 100 10 80 Noise figure NF (dB) -1 -3 -10 -30 -100 Power gain PG (dB) 30 25 20 15 10 5 8 60 6 40 4 20 2 0 - 0.1 - 0.3 -1 -3 -10 0 - 0.1 - 0.3 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Emitter current IE (mA) Emitter current IE (mA) Emitter current IE (mA) bib -- gib 0 0 brb -- grb 48 yrb=grb+jbrb VCB=10V bfb -- gfb Forward transfer susceptance bfb (mS) 200 300 500 yfb=gfb+jbfb VCB=10V 40 f=200MHz IE=-5mA 32 -2mA 24 500 600 16 300 yib=gib+jbib VCB=10V Input susceptance bib (mS) -10 -20 IE=-2mA f=900MHz -5mA 600 500 300 200 Reverse transfer susceptance brb (mS) - 0.4 - 0.8 600 -1.2 f=900MHz -2mA -1.6 IE=-5mA -30 -40 -50 -2.0 8 900 -60 0 10 20 30 40 50 -2.4 -1.0 - 0.8 - 0.6 - 0.4 - 0.2 0 0 -60 -40 -20 0 20 40 Input conductance gib (mS) Reverse transfer conductance grb (mS) Forward transfer conductance gfb (mS) bob -- gob 12 yob=gob+jbob VCE=10V 900 Output susceptance bob (mS) 10 600 IE=-2mA 6 500 -5mA 8 4 300 2 f=200MHz 0 0 0.4 0.8 1.2 1.6 2.0 Output conductance gob (mS) 427 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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